双层多晶硅FlotoxEEPROM单元的优化设计

Journal of Applied Sciences ›› 1997, Vol. 15 ›› Issue (1): 82-88.

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OPTIMIZA TION DESIGN OF TWO-POLY SILICON FLOTOX EEPROM CELL

YU ZONGGUANG¹, Xu JUYAN¹, WANG HONGBIN¹, WEI TONGLI²

1. Central Research Institute, Hua Jing Group Co, Wuxi, 214035;
2. Microelectronic Research Centre, Sotheast University, Nanjing, 210096

Received:1995-12-20 Revised:1996-05-08 Online:1997-03-31 Published:1997-03-31

Abstract

Abstract: In this paper, the model of two-polysilicon folotox EEPROM threshold voltage model has been established. Then, the relatioa between erase/write tbredbold voltage and erase/write time, programing voltage, tunnel area, folox thickness have been studied based on this model. Tbe two-polysilicon fotox EEPROM cell has beea designed The experiment reaults are approximately-concordant with the sizaulation results. So, the thresbold model can be used as a fast, sim ple, actual ruler for EEPROM cell optimization deaign.

Key words: model, floating-gate tunnel oxide, EEPROM, threshold voltage

YU ZONGGUANG, Xu JUYAN, WANG HONGBIN, WEI TONGLI. OPTIMIZA TION DESIGN OF TWO-POLY SILICON FLOTOX EEPROM CELL[J]. Journal of Applied Sciences, 1997, 15(1): 82-88.

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OPTIMIZA TION DESIGN OF TWO-POLY SILICON FLOTOX EEPROM CELL

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