Journal of Applied Sciences ›› 1995, Vol. 13 ›› Issue (4): 413-418.
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WANG JIANBAO, YUAN JIAN, YANG MIN, HUANG DAMING, LU FANG, SUX HENGHUI
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Abstract: Heavily boron-doped silicon films grown by molecular beam epitaxy are investigated by Raman scattering. The lineshapes of Raman spectra are analyzed based on the theory of electron-phonon interaction. The relation between the linewidth and the carrier concentration is established experimentally,and the resul is consistent with the theoretical estimation found in previous literature.The relation provides a calibration for determining the carrier concentration through Raman scattering measurements.
Key words: Raman spectra, heavily boron-doped, electron-phonon interaction
WANG JIANBAO, YUAN JIAN, YANG MIN, HUANG DAMING, LU FANG, SUX HENGHUI. RAMAN SCATTERING INVESTIGATION OF HEAVILY BORON-DOPED SILICON FILMS GRCWN BY MOLECULAR BEAM EPITAXY[J]. Journal of Applied Sciences, 1995, 13(4): 413-418.
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URL: https://www.jas.shu.edu.cn/EN/
https://www.jas.shu.edu.cn/EN/Y1995/V13/I4/413
