中文

Journal of Applied Sciences ›› 1984, Vol. 2 ›› Issue (1): 1-10.

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GROWTH OF HIGH PURITY InAs CRYSTALS AND A DISCUSSION ON THE RESIDUAL DONORS Ⅱ. Growth of High Purity InAs Crystals and Effect of Heat Treatment on their Electrical Properties

WU JISEN, ZOU YUANXI, MO PEIGEN   

  1. Shanghai Institute of Metallurgy, Academia Sinica, Shanghai China
  • Received:1982-04-16 Online:1984-03-31 Published:1984-03-31

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Abstract: In the growth process specially treated-quartz (STQ) boat is used for the growth of high purity InAs crystals. Experiment results show that the comtaraination of Si, and the wetting of the boat could be eliminated in the process with an improvement in the electrical properties of the grown crystals (n77=1.5-2.0×1016 cm-3,μ77=64000-60000 cm2/V·s and up to 68800 cm2/V·s) compared with those grown from conventional quartz boats.