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Table of Content

    31 March 1984, Volume 2 Issue 1
    Articles
    GROWTH OF HIGH PURITY InAs CRYSTALS AND A DISCUSSION ON THE RESIDUAL DONORS Ⅱ. Growth of High Purity InAs Crystals and Effect of Heat Treatment on their Electrical Properties
    WU JISEN, ZOU YUANXI, MO PEIGEN
    1984, 2(1):  1-10. 
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    In the growth process specially treated-quartz (STQ) boat is used for the growth of high purity InAs crystals. Experiment results show that the comtaraination of Si, and the wetting of the boat could be eliminated in the process with an improvement in the electrical properties of the grown crystals (n77=1.5-2.0×1016 cm-3,μ77=64000-60000 cm2/V·s and up to 68800 cm2/V·s) compared with those grown from conventional quartz boats.
    PATH-INDEPENDENT INTEGRALS IN DYNAMICAL FRACTURE PROBLEMS FOR VISCO-ELASTIC-PLASTIC MEDIA
    C. OUYANG
    1984, 2(1):  11-14. 
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    In this paper, the results in reference[1] for nonlinear elastic and elastic-plastic media are extended into the path-independent integrals for dynamic fracture problems of visco-elastic-plastic media. Some path-independent integrals are worked out and shown to be the dynamic crack extension force. Thus, it is possible to use these integrals to form some dynamic fracture criterion for visco-elastic-plastio media.
    ANALYSIS OF RECTANGULAR-CORRUGATED WAVEGUIDES BY CHARACTERISTIC-MATRIX METHOD
    CAO ZHUANGQI, FANG JUNXIN
    1984, 2(1):  15-22. 
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    In this paper, a new method is presented for analysing rectangular-corrugated waveguides. First, with the concept of effective index of refraction, the rectangular-corrugated waveguide is transformed into a system of multilayered optical films and thus, the two-dimensional electromagnetic field problem is replaced by a one-dimensional problem instead. Then, by using the characteristic matrix method, we have obtained some important results of the rectangular-corrugated waveguide. The expression of coupled coefficient we obtained, is simpler and more precise in comparison with the results derived by conventional methods. Besides, the forbidden gaps of three kinds of rectangular-corrugated wavtguides have been calculated in detail and the derived centres of the forbidden gaps are actually distinct rather than coincident.
    ACCOMPANYING THERMAL EFFECT IN SURFACE ACOUSTOOPTIC DIFFRACTION AND ITS INFLUENCEON MODE INDEX OF OPTICAL WAVEGUIDES
    SHEN ROXGGUI, CHEN YIXIN, XU ZHEXGQIUAN
    1984, 2(1):  23-32. 
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    In this paper the accompanying thermal effect observed in acoustooptic diffraction experiments with surface acoustic wave and optio gnided-wave is reported. The thermal-effected waveguide effective mode index change of 10-4-10-3 magnitude has been measured. With the help of thermovision technique and calculation, the mechanism of the thermal effect is described.
    ARCHITECTURE OF THE MICRO-ARRAY-PROCESSOR SYSTEM MC-MAP
    YANG KEZHONG, DU YIEEN
    1984, 2(1):  33-42. 
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    A SIMD (Single Instruction stream and Multiple Data streams) micro-array-processor system MC-MAP is proposed, in which a general purpose microcomputer is the host and a micro-array-processor (MAP) is the slave. This article describes the features of the three mainparts of MAP——the control unit ACU, the processing unit APU and the input/output unit AIO——and microprogramming technique is adopted.
    For the time being, a model consisted of 16 PEs has already been built. When single-board-computer is applied instead of ACU, simulant operation can be carried out and the parallel Gauss-Jordan algorithm has successfully been performed.
    AN IMPROVEMENT ON GENERALIZATION OF THE BOUND FOR SUBFIELD SUBCODES OFMODIFIED REED-SOLOMON CODES
    G. L. FENG, K. K. TZENG
    1984, 2(1):  43-48. 
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    In this paper we have improved the theorem on generalization of the bound for subfield subcodes of modified Reed-Solomon codes. It can generalize the bound of minimun distance for more subfield subcodes of modified Reed-Solomon codes. The result in this paper can be easily extended to the generalized Goppa codes defined by Lagrange's interpolation formula.
    A STUDY OF THE DIRECTION OF THE METAL DENDRITE GROWTH
    SHI NALI, CAI YOUQING
    1984, 2(1):  49-56. 
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    Based on the fundamentel principles of thermodynamics for crystallization, combined with law on the atomic arrangement within the lattice, the article studied the direction of the metal dendrite growth, and the result obtined corresponds to practice.
    CHANNELING DIP ASYMMETRY OF <110> AXIS IN ZnS-TYPE CRYSTALS AND THE LATTICE LOCATION OFIMPURITY Sn ATOMS IN GaAs CRYSTAL
    ZHANG ZUHUA
    1984, 2(1):  57-66. 
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    The channeling dip asymmetry of <110> axis in the orystals with zincblende structure has been investigated and interpreted, qualitatively, as a result of the asymmetric arrangment of the As and Ga atomic rows on the plane perpendicular to <110> axis. Based on this experimental phenomenon, a new technique has been developed for lattice location of impurity atoms in ZnS-type crystals. The superiorities of this new technique over the conventional channeling technique for lattice location of impurity atoms have been evaluated. The hot-implanted impunity of group-Ⅳ element Sn in GaAs crystal has been identified on Ga substitutional site by this new technique.
    MIX LOOKIN DETECTION TECHNIQUE FOR LOW RESISTANCE DEVICE JUNCTION CAPACITANCE MEASUREMENTS
    WANG JIYUAN, LING CHENGENG
    1984, 2(1):  67-74. 
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    The mix-lookin detection technique for high frequency signal measurement with low frequency look-in amplifier is presented. This technique being used for junction capacitance measurements of low resistance semicondnetor deoices. satisfied results are obtained. The operatinal frequency of this apparatus is continuously tunable within 400 kHz-4 MHz nange. The junction capacitance of devices, which junction resistance is as low as 50 ohm, can be measured. The measurement results for Hg Cd Te photodiodes are presented.
    THE STUDY OF ANODIC OXIDATION, MIS CHARACTERISTICS AND CARRIER CONCENTRATION PROFILE OF INP
    DING YONGQING, PENG RUIWU, WANG GUANGYUAN
    1984, 2(1):  75-80. 
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    The I-V and C-V characteristic of N-type InP MIS Schottky diode prepared by the anodic oxidation are studied for the first time. From the I-V characteristic curve the ideal factor (n) of 1.4 and the barrier height of more than 0.75 eV are obtained. The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching. This MIS structure could be helpful in the studies of deep levels in InP materials.
    LONGITUDINALLY DISCHARGED XeCl EXCIMER FLASH LAMP
    ZHOU ZHENZHUO, QIU MINGXIN, CHEN FANONG
    1984, 2(1):  81-84. 
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    In this paper, XeCl excimer flash lamp, excited by meang of longitudinal discharge, is described. The main parameters of this flash lamp have been measured. The UV radiation efficiency of the flash camp is up to 24%, which is mainly resulted from the B-X bard transition of XeCl.
    THE RMS BANDWIDTH OF NONLINEAR ENVELOPE DETECTOR AND ITS APPLICATION TOCHANNEL MEASUREMENT
    DAI YAOSEN
    1984, 2(1):  85-88. 
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    This paper determines the relationship between the rms bandwidth of the envelope of a narrow-band process and the rms bandwidth of tho process itself for a general nonliner (no-memory) envelope detector, the input need not be a Gaussian Variable. Then, the results obtained may be applied to the real envelope technique for the real-time simultaneous measurement of multipath spread and Doppler spread, the channel need not necessarily be a gaussian channel.
    EVALUATION OF VAPOR GROWTH Pb1-xSnxTe SINGLE CRYSTALS IN QUALITY
    SR CHENGCAI
    1984, 2(1):  89-94. 
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    In this paper the macroscopic defects of vapor growth Pb1-xSnxTe single crystals are discussed, the composition homogeneity and electrical properties of crystals are measured, and the methods by which both the dislocation densith and impurities of crystals can be reduced are pointed out.