Abstract: The I-V and C-V characteristic of N-type InP MIS Schottky diode prepared by the anodic oxidation are studied for the first time. From the I-V characteristic curve the ideal factor (n) of 1.4 and the barrier height of more than 0.75 eV are obtained. The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching. This MIS structure could be helpful in the studies of deep levels in InP materials.