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31 December 1983, Volume 1 Issue 4
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Articles
COMPLEX RAY ANALYSIS OF RADOME-COVERED LARGE APE RTURE ANTENNAS
X. GAO, L. B. FELSEN
1983, 1(4): 289-292.
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The field radiated by an antenna may be affected substantially by a covering radome.
THE NUMBER SET OF SUMS UNEQUAL AND APPLICATION
XU KUNLIN
1983, 1(4): 293-304.
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In this paper we proposed the concepts of the number set with all partial sums unequal and the number set with a part of partial sums unequal. The constructive theorems and properties of such number sets are given and related calculation formulas have been worked out. It has been proved that under special conditions geometrical sequence is a number set with all partial sums unequal. At last, some application, examples of such number sets in developing electronic brain for traditional Chinese medicine, computer information processing of Chinese characters and industrial quality check are given.
RESEARCH AND DEVELOPMENT OF MICRO-ARRAY-PROCESSOR SYSTEM
YANG KEZHONG, DU YIREN
1983, 1(4): 305-312.
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A SIMD (Single instruction stream-multiple data stream) mioro-array-proces.玱r system is proposed. In the system, a general purpose microcomputer is the host and the micro-array-processor (MAP) is an option.
Processing elements' array (APU) is the mainbody of the system. It is consisted of 8*8 PEs and takes the responsibility of manipulating data parallelly. All PEs have the same structure and each one involves a 3002 bit-slice, two local memories and some random logic. A variety of PM11 network interconnects the PEs and "Coordinate Crossbar" is adopted to initiate the active pattern of the array.
INVESTIGATIONS OF THE CHARACTERISTICS OF THE INTERFACE BETWEEN SI AND REACTIVELY R.F.SPUTTERED SiO
2
ZHANG XIANGJIU, HU JIHUANG, HUANG WEINING, JIANG GUOBAO
1983, 1(4): 313-318.
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The infrared spectrum of the reaotively E. F. sputtered SiO
2
film ig studied in the present work and it has been discovered that the reaction of Si with oxygen during the sputtering is not complete. This might canse higher density of interfaoial states between Si and the sputtered SiO
2
. In order to improve the characteristics of the interface, the SiO
2
film sputtered on the Si wafer is oxidized and annealed in an ambient of nitrogen contained CCl
4
at 950℃. As a result, the characteristics of the interface are greatly improved and the interface state density is reduced to 5.3×10
10
/cm
2
. v for the ntype silicon wafer with (100) orientation. MOS transistors can be made using this kind of SiO
2
film as the gate.
EFFECT OF PHONON DISPERSION ON POLARON
GU SHIWEI
1983, 1(4): 319-326.
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In this paper, the dispersion of the longitudinal optical phonon is considered in a parabolic approxiamation. The ground state energy, effective mass and polarization potential are calculated. Itis found that the more the phonon dispersion, the larger are the self-trapped energy and effective mass of a polaron, and the smaller is the screening radius.
AES STUDY OF THE COMPOSITIONAL TRANSITION LAYER IN In
1-
x
Ga
x
As
y
P
1-
y
-InP HETEROJUNCTION INTERFACE
LI MINGDI, GONG XIAOCHENG, ZHU RENGMU, CHEN YIXIN, XU XINHUI
1983, 1(4): 327-336.
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AES (Auger Electron Speotroscopy) was used to study the composition depth profile of In
1-
x
Ga
x
As
y
P
1-
y
-InP single heteroju notion fabricated by two-phase supercooling LPE (Liquid Phase epitaxy) method. The variation in initial growth tem perature of the quaternary layer covers the range of 631℃~641℃ and the cooling rate varied from 0.7℃/min to 1.2℃/min. It has been realized that the atom concentration in percent of each composition of the thin quaternary layer, whereof the thickness is less than 0.5
μ
m, does not vary with the depth
Z
. The atom concentration in percent of phosphorus
C
P
(
Z
) in the compositional transition layerof the heterojunction interface versus the depth
Z
can be formulated experimentally as a hyperbolic tangent function.
THE ENERGY-LEVEL SPLITTINGS OF A MULTI-LAYER SUPERLATTICE
ZHOU XIAOLING, WANG ZHICHENG, SHEN HONGEN
1983, 1(4): 337-344.
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In this article, the energy-level splittings of a multi-layer supperlattioe are analysed theoretically and a simple expression about the splittings has thus been derived. It is clear to see that the energy-level of a single well splits into a number of levels as a result of the coupling of the wells, the number of the splittings being just the same as expected as that of wells. The splittings of a certain energy level are not only related to the energy level but also relevant to the material parameter and structure parameter of the super lattice. The result has been applied to a GaAs-Alx Ga (1-x) As superlattice, and the calculation about its energy-level splittings yields data in pretty good agreement with experimental values.
NITROGEN AND OXYGEN INDUCED DEEP LEVELS IN GaAs
1-
x
P
x
ZHOU JICHRNG, QIAO YONG, SUN YILIK, SHEN DEXIK, XU GHENMEI
1983, 1(4): 345-352.
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The ion-implantation technique was used for introducing nitrogen into GaAs
1-
x
P
x
with or without oxygen. The dependence of nitrogen energy levels of close-spaced epitaxially grown GaAs
1-
x
P
x
(with oxygon) on composition can be represented by an "abnormal" curve as compared with data reported in the literature. The relationship between composition X and nitrogen energy levels in VPE GaAs
1-
x
P
x
(without oxygen) grown under phosphorous pressures can be expressed as.
X-RAY POWDER DIFFRACTION DATA BASE (FXDB) AND ITS SEARCH PROGRAM (FXSM)
MA LIDUX, XU ZISHENG, WANG BOYI
1983, 1(4): 353-360.
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Previously at home and abroad,
d
-spacing was the foundation for X-ray powder diffraction data base, which was not convenient for search and match, because
△d
and
△d/d
, deviation of
d
, varied with d. In this work, diffraction angle 2
θ
for Cu
K
a
radiation is used for the foundation of the data base instead of
d
.
A MODIFIED HONIZONTAL GARADIENT-FREEZE APPREACH TO THE GROWTH OF FULLY SILICON-IMPLATED GaAs DUAL-GATE MESFET
WANG WEIYUAN, LU JIANGUO, QIAO YONG, ZHOU YONGQUAN, XIA GUANQUN, SHAO YONGFU, YAN XINMIN, CHEN ZIYAO, LUO CHAOWEI, ZAN QIANBAO, WANG WENQI
1983, 1(4): 361-368.
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In this paper, we report on a fully Silicon-implanted planar GaAs dual-gate MESFET. The energy and dose used in the implantation for the active layer were 110keV and 3.5×10
12
cm
-2
respectively, and for the contact layer, were 50keV and
ε
×10
12
cm
-2
respectively. After implantation, all the samples were annealed at 800℃ for 30 minutes. Aluminium gates of 1.5×300
μ
m and Au-Ge-Ni ohmic contact were used. The devices were packaged in simple ceramic or plastic packages.
DERIVATION OF AUTO-BACKLUND TRäNSFORMATIONS USING INVERTIBLE BäCKLUND TRANSFORMATIONS
HUANG XUNCHENG
1983, 1(4): 369-372.
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The ordinary methods for deriving the Backlund transformations of evolution equations are those first studied by Glairin
[1]
, by Chen
[2]
and by Hirota
[3]
. In this letter wo show another useful way that can obtain an auto-Backlund transformation, by means of an invertible Backlund transformation.
DECOMPOSITIONS OF THE BäCKLUND TRANSFORMATIONS UNDER THE HIROTA S FORM
HUNAG XLNCHENG
1983, 1(4): 373-375.
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In this paper, we discuss firstly the decompositions of the Backlund transformations under the Hirota's form for some nonlinear evolution equations.
A SPECULATION ABOUT THE NATURE OF RECOMBINATION CENTERS IN InSb
SUN QING, ZOU YUANXI, SHI HUIYING
1983, 1(4): 376-378.
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In this article, the probable nature of the two recombination centers commonly found in InSb (
E
v
+ 0.071eV,
E
v
+ 0.11eV) is discussed. By assuming some interactions among defects and impurities in InSb, it is postulated that the defects V
In
O
i
V
In
and Sb
In
could tentatively be assigned to the said centers respectiuely.
STIMULATED RAMAN SCATTERING IN AN SINGLE-MODE FIBER
YANG TIANLONG, GAO PEIJUAN
1983, 1(4): 379-381.
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The visible and infrared stimulated Raman scatterings of a single-mode fibre have been investigated experimentally. Stimulated Raman scattering of more than 7-orders for visible light and more than 3-orders for infrared have been observed. In addition, the IR anti-Stockes SRS with continuous spectrum has also been observed.
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Bimonthly, Founded in 1983
Editor-in-Chief:Wang Tingyun
ISSN 0255-8297
CN 31-1404/N
