Abstract: The ion-implantation technique was used for introducing nitrogen into GaAs_1-xP_x with or without oxygen. The dependence of nitrogen energy levels of close-spaced epitaxially grown GaAs_1-xP_x (with oxygon) on composition can be represented by an "abnormal" curve as compared with data reported in the literature. The relationship between composition X and nitrogen energy levels in VPE GaAs_1-xP_x (without oxygen) grown under phosphorous pressures can be expressed as.