中文

Journal of Applied Sciences ›› 1983, Vol. 1 ›› Issue (4): 361-368.

• Articles • Previous Articles     Next Articles

A MODIFIED HONIZONTAL GARADIENT-FREEZE APPREACH TO THE GROWTH OF FULLY SILICON-IMPLATED GaAs DUAL-GATE MESFET

WANG WEIYUAN1, LU JIANGUO1, QIAO YONG1, ZHOU YONGQUAN1, XIA GUANQUN1, SHAO YONGFU1, YAN XINMIN1, CHEN ZIYAO1, LUO CHAOWEI1, ZAN QIANBAO1, WANG WENQI2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Shanghai University of Science and Technology, Branch
  • Received:1982-02-08 Revised:1982-03-23 Online:1983-12-31 Published:1983-12-31

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Abstract: In this paper, we report on a fully Silicon-implanted planar GaAs dual-gate MESFET. The energy and dose used in the implantation for the active layer were 110keV and 3.5×1012cm-2 respectively, and for the contact layer, were 50keV and ε×1012 cm-2 respectively. After implantation, all the samples were annealed at 800℃ for 30 minutes. Aluminium gates of 1.5×300μm and Au-Ge-Ni ohmic contact were used. The devices were packaged in simple ceramic or plastic packages.