掺硫低位错磷化铟单晶生长和性质

应用科学学报 ›› 1983, Vol. 1 ›› Issue (3): 235-242.

掺硫低位错磷化铟单晶生长和性质

方敦辅, 王祥熙, 徐涌泉, 缪涵英, 牟盘健

中国科学院上海冶金研究所

收稿日期:1981-12-22 出版日期:1983-09-30 发布日期:1983-09-30

THE GROWTH AND CHARACTERICS OF S-DOPED LOW DISLOCATION InP SINGLE CRYSTALS

FANG DUNFU, WANG XIANGXI, XU YONGQUAN, MIAO HANYING, MOU PANJIAN

Shanghai Institute of Metallurgy, Academia Sinica

Received:1981-12-22 Online:1983-09-30 Published:1983-09-30

摘要/Abstract

摘要： 在高压液封直拉(LEC)法生长InP单晶时,利用杂质效应掺入硫,可以有效地降低位错密度.当载流子浓度达3×10¹⁸ cm^-3时,位错密度降低到108cm^-2左右,此时补偿比在0.1~0.3之间.硫在InP中的有效分配系数为0.68.
掺硫InP单晶具有较好的径向及纵向均匀性,这将给稳定器件工艺及提高材料利用率带来好处.

Abstract: Low dislocation InP crystals in a<111>P direction were pulled with a liquid encapsulated Czochralski technique by impurity doping procedure. Grown-in dislocations were diminished when the sulfur or sulfide was doped. The impurity effect on the dislocation density was examined. Dislocation density was obviously decreased when sulfur concentration exceeded 2×10¹⁸ cm^-3 with compensation ratio in the range of 0.1~0.3. The coefficient of effective distribution of sulfur in InP grown by LEC is 0.68.
Since S-doped InP crystals have better radial and longitudinal homogeneity than Sn-doped ones, it will bring about stabilization in device fabrication and improvement in material applicability.

方敦辅, 王祥熙, 徐涌泉, 缪涵英, 牟盘健. 掺硫低位错磷化铟单晶生长和性质[J]. 应用科学学报, 1983, 1(3): 235-242.

FANG DUNFU, WANG XIANGXI, XU YONGQUAN, MIAO HANYING, MOU PANJIAN. THE GROWTH AND CHARACTERICS OF S-DOPED LOW DISLOCATION InP SINGLE CRYSTALS[J]. Journal of Applied Sciences, 1983, 1(3): 235-242.