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应用科学学报 ›› 1983, Vol. 1 ›› Issue (3): 273-276.

• 论文 • 上一篇    下一篇

掺Cr半绝缘GaAs材料质量对离子注入层电学性质的影响

邵永富, 陈自姚, 彭瑞伍   

  1. 上海冶金研究所
  • 收稿日期:1982-01-02 出版日期:1983-09-30 发布日期:1983-09-30

THE INFLUENCE OF Cr-DOPED S.I-GaAs SUBSTRATE ON THE ELECTRICAL CHARACTERISTICS OF IMPLANTED LAYERS

SHAO YONGFU, CHEN ZIYAO, PENG RUIWU   

  1. Shanghai Instiute of Metallurgy, Academia Sinica
  • Received:1982-01-02 Online:1983-09-30 Published:1983-09-30

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76

被引次数

1

摘要： 半绝缘(S.I)GaAs材料既在微波MESFET器件中用作外延生长的衬底又在集成电路中用作直接离子注入的掺杂层材料,因此进一步了解S.I-GaAs材料的质量是十分重要的.本文将Si28直接注入到不同质量的掺Cr.S.I-GaAs衬底,然后测量注入层的载流子浓度分布和迁移率,从而直接评价SI-GaAs材料的质量,并对实验结果进行了讨论.

Abstract: The carrier concentration and mobilities profiles of implanted layers on the Cr-doped S. I-GaAs after annealing depend on the substrate qualities. In many oases, the departure of carrier concentration profiles from the L. S. S. curve is due to the presence of high background impurities in the substrates, while the Hall mobility profiles of implanted layers are influenced by the residual stress from radiation damage.