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应用科学学报 ›› 1984, Vol. 2 ›› Issue (1): 1-10.

• 论文 •    下一篇

砷化铟中的剩余施主和高纯砷化铟晶体的生长Ⅱ.高纯砷化铟晶体生长及热处理对电学性质的影响

吴际森, 邹元爔, 莫培根   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-04-16 出版日期:1984-03-31 发布日期:1984-03-31

GROWTH OF HIGH PURITY InAs CRYSTALS AND A DISCUSSION ON THE RESIDUAL DONORS Ⅱ. Growth of High Purity InAs Crystals and Effect of Heat Treatment on their Electrical Properties

WU JISEN, ZOU YUANXI, MO PEIGEN   

  1. Shanghai Institute of Metallurgy, Academia Sinica, Shanghai China
  • Received:1982-04-16 Online:1984-03-31 Published:1984-03-31

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摘要： 用特别处理的石英舟生长纯度InAs晶体,不仅避免了Si沾污,而且能克服沾舟的困难.晶体的电学性质μ77在54000~60000 cm2/V·s之间,最高达68800 cm2/V·s,n77在1.5~2.0×1016cm-3范围,比一般石英舟生长的为好.用它作GaInAs气相外延的源,也能得到较好结果.

Abstract: In the growth process specially treated-quartz (STQ) boat is used for the growth of high purity InAs crystals. Experiment results show that the comtaraination of Si, and the wetting of the boat could be eliminated in the process with an improvement in the electrical properties of the grown crystals (n77=1.5-2.0×1016 cm-3,μ77=64000-60000 cm2/V·s and up to 68800 cm2/V·s) compared with those grown from conventional quartz boats.