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应用科学学报 ›› 1984, Vol. 2 ›› Issue (1): 57-66.

• 论文 • 上一篇    下一篇

ZnS型晶体<110>沟道坑不对称性及锡在砷化镓中的晶格位

张祖华   

  1. 上海科技大学
  • 收稿日期:1982-02-26 出版日期:1984-03-31 发布日期:1984-03-31

CHANNELING DIP ASYMMETRY OF <110> AXIS IN ZnS-TYPE CRYSTALS AND THE LATTICE LOCATION OFIMPURITY Sn ATOMS IN GaAs CRYSTAL

ZHANG ZUHUA   

  1. Shanghai University of Science and Technology
  • Received:1982-02-26 Online:1984-03-31 Published:1984-03-31

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摘要： 本文阐明了ZnS型晶体中<110>沟道坑的不对称性这一新的实验现象,定性地证明了这种不对称性起因于原子排列的几何分布的不对称性.利用这个新的实验现象作为晶格定位手段,测定了离子注入的杂质原子Sn在GaAs晶体中占Ga位,其<110>方向的替位率为88%左右.通过与常规的沟道定位技术相比较,新的定位技术其主要优点在于:(1)在较短的时间内、使用较少的束流剂量就能完成定位实验;(2)对于由质量数相近的两类基质原子构成的ZnS型晶体,新的定位技术克服了常规沟道定位技术的困难;(3)这种新技术能测定ZnS型晶体<111>方向的堆垒次序(stacking order).

Abstract: The channeling dip asymmetry of <110> axis in the orystals with zincblende structure has been investigated and interpreted, qualitatively, as a result of the asymmetric arrangment of the As and Ga atomic rows on the plane perpendicular to <110> axis. Based on this experimental phenomenon, a new technique has been developed for lattice location of impurity atoms in ZnS-type crystals. The superiorities of this new technique over the conventional channeling technique for lattice location of impurity atoms have been evaluated. The hot-implanted impunity of group-Ⅳ element Sn in GaAs crystal has been identified on Ga substitutional site by this new technique.