English

应用科学学报 ›› 1984, Vol. 2 ›› Issue (1): 75-80.

• 论文 • 上一篇    下一篇

InP单晶的阳极氧化,界面参数和浓度分布的研究

丁永庆, 彭瑞伍, 汪光裕   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-01-30 出版日期:1984-03-31 发布日期:1984-03-31

THE STUDY OF ANODIC OXIDATION, MIS CHARACTERISTICS AND CARRIER CONCENTRATION PROFILE OF INP

DING YONGQING, PENG RUIWU, WANG GUANGYUAN   

  1. Shanghai Institute of Metallurgy Academy of Sciences of China
  • Received:1982-01-30 Online:1984-03-31 Published:1984-03-31

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被引次数

1

摘要： 本文首次测量了用阳极氧化方法制得的N型InPMIS二极管的I-V和C-V特性.从I-V特性曲线计算出二极管的理想因子n值为1.4,势垒高空>0.75eV.用汞探针和阳极氧化逐层剥离的方法测得了N型InP气相外延载流子浓度的纵向分布.此法制得的金势垒MIS结构可能对开展InP深能级工作有所帮助.

Abstract: The I-V and C-V characteristic of N-type InP MIS Schottky diode prepared by the anodic oxidation are studied for the first time. From the I-V characteristic curve the ideal factor (n) of 1.4 and the barrier height of more than 0.75 eV are obtained. The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching. This MIS structure could be helpful in the studies of deep levels in InP materials.