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应用科学学报 ›› 1984, Vol. 2 ›› Issue (1): 89-94.

• 论文 • 上一篇    

汽相生长的碲锡铅单晶的质量评价

司承才   

  1. 中国科学院上海技术物理研究所
  • 收稿日期:1982-08-13 出版日期:1984-03-31 发布日期:1984-03-31

EVALUATION OF VAPOR GROWTH Pb1-xSnxTe SINGLE CRYSTALS IN QUALITY

SR CHENGCAI   

  1. Shanghai Institute of Technical Physics. Academia Sinica
  • Received:1982-08-13 Online:1984-03-31 Published:1984-03-31

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摘要： 碲锡铅(Pb1-xSnxTe)是一种禁带宽度可调的三元化合物半导体,用它不仅可制备814μm的高灵敏度的红外探测器,而且可以制备长波红外可调谐激光器.

Abstract: In this paper the macroscopic defects of vapor growth Pb1-xSnxTe single crystals are discussed, the composition homogeneity and electrical properties of crystals are measured, and the methods by which both the dislocation densith and impurities of crystals can be reduced are pointed out.