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应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 189-194.

• 论文 •    下一篇

InSb1-xBix的液相外延

孙清1, 吴汶海1, 邹元爔2, 施惠英2   

  1. 1. 上海科学技术大学;
    2. 中国科学院上海冶金研究所
  • 收稿日期:1982-09-27 出版日期:1984-09-30 发布日期:1984-09-30

LIQUID PHASE EPITAXY OF InSb1-xBix

SUN QING1, WU WENHAI1, ZOU YUANXI2, SHI HUIYING2   

  1. 1. Shanghai University of Science and Technology;
    2. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1982-09-27 Online:1984-09-30 Published:1984-09-30

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摘要： 本文采用液相外延方法在InSb衬底上生长InSb1-xBix外延层,初步得出了外延生长条件包括温度,生长速率,熔池组分及衬底取向等与外延层x值的关系.此外,为了使x值达到所希望的适当范围,进行了InSb1-xBix电外延的初步试验.

Abstract: The work reported in this paper may be divided into three parts, viz-measurement of liquid solubilities of InSb in the metallic solvents Bi and In-Bi, LPE of InSb1-xBix and current-controlled LPE of InSb1-xBix.On the basis of the solubility data within the temperature range 300-450℃, the following equation has been obtained.