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应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 241-246.

• 论文 • 上一篇    下一篇

干燥HCl对热氧化生长SiO2的影响

陆德仁   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-06-05 出版日期:1984-09-30 发布日期:1984-09-30

EFFECT OF DRY HCI ON THERMALLY GROWN SiO2

LU DEREN   

  1. Shanghai Institute of Metallurgy, Chinese Academy of Sciences
  • Received:1982-06-05 Online:1984-09-30 Published:1984-09-30

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摘要： 采用干燥的HCl气体,作为HCl热氧化的气体源,制成铝膜MOS结构,其固定氧化物电荷几乎为零,界面陷阱密度低于1×1010陷阱/厘米2-电子伏特,对于人为的异常高的(大约3×1013离子/厘米2)可动钠离子沾污,仍具有99.5%以上的钝化效率.讨论了达到这些性能的原因.

Abstract: By using very dry HCl gas as an additive species in thermal oxidation ambient, we obtained an aluminium film MOS structure with an almast zero fixed oxide charge, an interface trap density below 1×1010 no./cm2-eV and a passivation efficiency above 99.5% at an intentional high sodium contamination of about 3×1013 ions/cm2. Reasons responsible for these results are discussed.