半导体材料切割表面损伤的电镜研究

应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 253-259.

半导体材料切割表面损伤的电镜研究

陆一宁¹, 顾淑湘²

1. 上海市测试技术研究所;
2. 中国科学院上海技术物理研究所

收稿日期:1982-11-17 出版日期:1984-09-30 发布日期:1984-09-30

A TEM STUDY ON SURFACE DAMAGE CAUSED BY CUTTING ON SEMICONDUCTIVE MATERIALS

LU YINING¹, GU SHUXIANG²

1. Shanghai Institute of Testing Technology;
2. Shanghai Institute of Technical Physics, Academia Sinica

Received:1982-11-17 Online:1984-09-30 Published:1984-09-30

摘要/Abstract

摘要： 利用高能反射电子衍射技术(RHEED),研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤.研究表明,在相同的切割条件下,损伤层的深度与被切割的材料有关;损伤层的晶体结构随损伤层的深度而变化;相同的材料在不同的切割条件下表层的损伤程度不同.我们认为,近完整晶体的切割损伤层是由多晶层、嵌镶结构层和畸变层组成.

Abstract: Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples. The results have shown that under same cutting condition, the depth of damage layers is correlated with material itself being cut; The structure of damage layers varies with the depth of damage layers; Under different cutting conditions, the damage on the surface of a material is different. We consider that damage layers on near perfect crystal consist of polycrystal layer, mosaic structure layer and distorted layer.

陆一宁, 顾淑湘. 半导体材料切割表面损伤的电镜研究[J]. 应用科学学报, 1984, 2(3): 253-259.

LU YINING, GU SHUXIANG. A TEM STUDY ON SURFACE DAMAGE CAUSED BY CUTTING ON SEMICONDUCTIVE MATERIALS[J]. Journal of Applied Sciences, 1984, 2(3): 253-259.