用电子束感生电压技术检测锑化铟红外探测器

应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 260-266.

用电子束感生电压技术检测锑化铟红外探测器

陈伯良, 俞锦陛, 丁素珍, 王行丰

中国科学院上海技术物理研究所

收稿日期:1983-03-26 出版日期:1984-09-30 发布日期:1984-09-30

CHARACTERIZATION OF InSb INFRARED PHOTODIODES BY ELECTRON BEAM INDUCED VOLTAGE TECHNIQUE

CHEN BOLIANG, YU JINBI, DIN SHUZHENG, WANG XINFENG

Shanghai Institute of Technical Physics, Academia Sinica

Received:1983-03-26 Online:1984-09-30 Published:1984-09-30

摘要/Abstract

摘要： 在DX-3A扫描电子显微镜上加上了低温样品架,在83K用电子束惑生电压技术(EBIV)检测了锑化铟光生伏特型红外探测器的若干性能.探测器的EBIV像可清楚地显示出光敏面扩大的程度及多元探测器中各敏感元之间的隔离不完善性.光敏面上缺陷引起的响应不均匀性也可灵敏地检测出来.对于具有腐蚀台阶的台面型探测器,从EBIV分布曲线可估计出p-n结的深度.

Abstract: A cooling stage with minimum, temperature of 83 K has been attached to a scanning electron microscope (type DX-3A, manufactured in China). InSb photovoltaic infrared detectors have been characterized by low temperature electron beam induced voltage (EBIY) technique. The extension of responsive areas of the detectors have been shown distinctly in the EBIV images. The nonuniformity of responsivity over a detector area resulting from imperfections can be detected sensitively. Also, the isolation imperfection between neibonring elements of a detector array can be shown conveniently. For the mesa type detector, it is possible to determine the depth of p-n junction nondostructively by the EBIV profile of the detector.

陈伯良, 俞锦陛, 丁素珍, 王行丰. 用电子束感生电压技术检测锑化铟红外探测器[J]. 应用科学学报, 1984, 2(3): 260-266.

CHEN BOLIANG, YU JINBI, DIN SHUZHENG, WANG XINFENG. CHARACTERIZATION OF InSb INFRARED PHOTODIODES BY ELECTRON BEAM INDUCED VOLTAGE TECHNIQUE[J]. Journal of Applied Sciences, 1984, 2(3): 260-266.