用低温光致发光研究Ⅲ-Ⅴ族化合物半导体材料的杂质和缺陷

应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 267-273.

用低温光致发光研究Ⅲ-Ⅴ族化合物半导体材料的杂质和缺陷

王绍渤, 吴瑞娣, 薛忠发

中国科学院上海冶金研究所

收稿日期:1982-04-21 出版日期:1984-09-30 发布日期:1984-09-30

AN INVESTIGATION ON THE IMPURITIES AND DEFECTS OF Ⅲ-Ⅴ COMPOUND SEMICONDUCTORS WITH LOW TEMPERATURE PHOTOLUMINECENCE

WANG SHOUBO, WU RUEYDEA, XUE ZHONQFA

Shanghai Institute of Metallurgy, Academia Sinica

Received:1982-04-21 Online:1984-09-30 Published:1984-09-30

摘要/Abstract

摘要： 我们对N-GaAs和N-InP单晶及外延层在4.2K和77K下测定了光致发光谱,并用C-V法测定了电学参数,确定了未掺GaAs中的受主杂质主要是C和Si.通过室温离子注入Si和退火处理,证明了GaAs中1.403eV光谱峰与Si及砷空位V_As有关,结合化学及离子微探针分析结果,对未掺InP晶体光谱曲线研究指出,~1.38eV光谱峰是C受主引起的,而1.08和~1.2eV峰分别与磷空位V_p及铟空位V_In有关.

Abstract: In this paper, the photoluminescence spectra of n-GaAs and n-InP single crystals as well as epitaxial n-InP have been investigated. The electrical properties were measured by means of c-v. It was determined that the residual acceptor impurities are dominantly C and Si in the undoped GaAs. By ion implantation with Si at room temperature, followed by annealing treatment, it has been proved that the 1.403eV peak of the spectrum in GaAa is related with Si and V_As. Incorporated with the results of the chemical analysis as well as the ion probe, the investigation of the spectra for the undoped n-InP crystals shows that the -1.38eV peak of the spectrum is caused by C acceptor; 1.08 and -1.2eV speaks are connected with V_P and V_In respectively.

王绍渤, 吴瑞娣, 薛忠发. 用低温光致发光研究Ⅲ-Ⅴ族化合物半导体材料的杂质和缺陷[J]. 应用科学学报, 1984, 2(3): 267-273.

WANG SHOUBO, WU RUEYDEA, XUE ZHONQFA. AN INVESTIGATION ON THE IMPURITIES AND DEFECTS OF Ⅲ-Ⅴ COMPOUND SEMICONDUCTORS WITH LOW TEMPERATURE PHOTOLUMINECENCE[J]. Journal of Applied Sciences, 1984, 2(3): 267-273.