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应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 277-279.

• 论文 • 上一篇    下一篇

发可见光的掺氮砷化镓

周继程1, 沈德新1, 乔墉1, 徐晨梅1, 翁渝民2   

  1. 1. 中国科学院上海冶金研究所;
    2. 复旦大学
  • 收稿日期:1982-09-10 出版日期:1984-09-30 发布日期:1984-09-30

VISIBLE LIGHT EMISSION FROM NITROGEN IMPLANTED GaAs

ZHOU JICHENG1, SHEN DEXIN1, QIAO YONG1, XU CHENMEI1, WENG YUMIN2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Fu Dan University
  • Received:1982-09-10 Online:1984-09-30 Published:1984-09-30

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摘要： 鉴于氮在磷砷化镓中能形成等电子陷阱,人们曾希望向砷化镓掺氮并研究其有关特性,但均未获成功[1~3]。主要困难是,即使用离子注入技术向砷化镓注14N+,但退火后的结果表明,氮的特征峰已不复存在。

Abstract: The visible light emission from nitrogen implanted GaAs by applying reverse bias has been observed for the first time in our laboratory.
Samples were prepared with following procedures:zino diffusion, nitrogen implantation (at 450℃), annealed under H2 atmosphere at temperature from 540°G up to 600-650℃ by applying the uncoating technique, and finally meases were performed by conventional techniques.