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应用科学学报 ›› 1984, Vol. 2 ›› Issue (3): 280-282.

• 论文 • 上一篇    

SI-GaAs光电导和光霍尔特性研究

钟金权, 谭丽芳, 廖丽英, 汪乐, 陈正秀   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-08-25 出版日期:1984-09-30 发布日期:1984-09-30

AN INVESTIGATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECT IN SI-GaAs

ZHONG JINQUAN, TAN LIFANG, LIAO LIYIN, WANG LER, CHEN ZENGXTU   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1982-08-25 Online:1984-09-30 Published:1984-09-30

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摘要： 研制了一套半绝缘半导体光电导率(PC)和光霍尔特性(PH)测试系统。应用该系统测量了多种类型SI-GaAs体单晶室温和77K的光电导特性及典型样品的室温光霍尔特性,对获得的谱线特征从Cr和O能级的角度作了分析讨论。

Abstract: A equipment for the measurements of photo-conductivity and photo-Hall effect, which provides a useful tool to investigate the influences of deep level impurities on the properties of semi-insulating materials, has been developed. The results at RT and 77 K by using this equipment on several different types of SI-GaAg crystals are reported. We also discuss some features of spectra obtained from these measurements. in view of the existence of Cr and O levels in crystals.