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应用科学学报 ›› 1985, Vol. 3 ›› Issue (1): 52-56.

• 论文 • 上一篇    下一篇

用电导深能级谱检测砷化镓肖特基栅场效应晶体管中的深能级中心

盛篪1, 詹千宝2   

  1. 1. 复旦大学物理系;
    2. 中国科学院上海冶金研究所
  • 收稿日期:1982-06-28 修回日期:1982-11-22 出版日期:1985-03-31 发布日期:1985-03-31

DETERMINATION OF DEEP LEVER CENTERS ON GaAs MESFET BY CONDUCTANCE DLTS

SHENG CHI1, ZHAN QIANBAO2   

  1. 1. Fudan University;
    2. Shanghai Institute of Metallurgy Chinese Academy of Sciences
  • Received:1982-06-28 Revised:1982-11-22 Online:1985-03-31 Published:1985-03-31

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摘要： 用电导法检测了砷化镓肖特基场效应管中的深能级中心,测试样品有外延材料及全离子注入两种.#br#实验结果表明在所有的场效应管中都存在有EV+0.91eV及EV+0.52eV两个深能级中心.前者是铬产生的能级.在噪声很大的全离子注入场效应管中还发现有EV十0.71eV能级.在一些噪声大的外延场效应管及性能已退化的场效应管的深能级瞬态谱上还有一很宽的大幅度的带,相应能级位置约在EV十0.12eV到EV十0.5eV之间.这可能是由界面态所引起的.测试表明全离子注入法制造的场效应管中的缺陷可少到最好的外延材料制造的场效应管水平.

Abstract: A conductance DLTS is developed to detect traps in epitaxial grown and ion-implanted GaAs MESFETS. The trap of EV+0.91eV which is generally regarded as Cr level and the trap of EV+0.52eV exist in both devices. Besides, a level of EV 4-0.71eV exists only in ion-implanted devices with large noise. A large and wide energy band at EV+0.2~EV+0.5eV is attributed to interface state which exists only in epitaxial large-noise FET and degraded devices.
The trap in ion-implanted GaAs FET can be decreased to a level of the best-quality epitaxial FET.