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应用科学学报 ›› 1987, Vol. 5 ›› Issue (4): 363-367.

• 论文 • 上一篇    下一篇

半导体表面层势、场和电荷分布的一种简明解析表达

倪庆霄   

  1. 中国科学院上海技术物理研究所
  • 收稿日期:1984-10-14 修回日期:1985-01-18 出版日期:1987-12-31 发布日期:1987-12-31

BRIEF ANALYTICAL EXPRESSIONS ON PROFILES OF POTENTIAL,FIELD AND CHARGE DENSITY IN SURFACE SPACE CHARGE LAYERS OF SEMICONDUCTORS

NI QINGXIAO   

  1. Shanghai Institute of Technical Physics, Academia Sinica
  • Received:1984-10-14 Revised:1985-01-18 Online:1987-12-31 Published:1987-12-31

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摘要： 半导体表面层偏离平带的状况有三种主要类型:积累层、耗尽层和反型层。关于表面层中场和势的分布,除了对耗尽层或弱反型层有熟知的"耗尽近似"简明解析表达外[1,2],对表面层其他类型.

Abstract: This paper presents brief analytical expressions on profiles of potential, field and charge density in strong accumulation layers and strong inversion layers of semiconductor sarface layers. A characteristic length D is defined and its physical significance is discussed.