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应用科学学报 ›› 1988, Vol. 6 ›› Issue (1): 74-77.

• 论文 • 上一篇    下一篇

硅烷外延生长速率和衬底取向的关系

章熙康, 顾隆道   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1986-02-24 修回日期:1986-08-20 出版日期:1988-03-31 发布日期:1988-03-31

THE EFFECT OF SUBSTRATE ORIENTED ON SiGROWTH RATE IN CVD PROCESS BY SILANE PYROLYSIS

ZHANG XIKANG, GU LONGDAO   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1986-02-24 Revised:1986-08-20 Online:1988-03-31 Published:1988-03-31

PDF

73

被引次数

2

摘要： 用硅烷热分解方法生长硅膜时,硅膜的生长速率与衬底取向及材料无关.不同衬底在低温区具有相同的生长激活能.作者认为硅烷外延生长和四氯化硅外延不同,其生长机制是硅烷气相分解产物通过滞流层向衬底的定向扩散并在衬底上堆积.

Abstract: In CVD process by silane pyrolysis, the growth rates of silicon are independent on the orientation and material of substrates. Identical activation energy for growth is obtained for different orientations. It is believed that the silicon growth is carried out by the diffusion of the homogeneous reaction products towards the substrate and the accumulation on it.