利用(nV,-nS)排列双晶衍射术测量晶片的微小弯曲形变

应用科学学报 ›› 1988, Vol. 6 ›› Issue (2): 103-108.

利用(n^V,-n^S)排列双晶衍射术测量晶片的微小弯曲形变

陈京一, 李润身, 许顺生

中国科学院上海冶金研究所

收稿日期:1986-09-10 修回日期:1987-05-17 出版日期:1988-06-30 发布日期:1988-06-30
基金资助:
中国科学院科学基金部分资助课题

THE MEASUREMENT OF CURVATURE RADⅡ OF SLIGHTLY BENT CRYSTALS BY (n^V,-n^S)DOUBLE-CRYSTAL DIFFRACTOMETRY

CHEN JINGYI, LI RUNSHEN, XU SHUNSHENG

Shanghai Institute of Metallurgy, Academia Sinica

Received:1986-09-10 Revised:1987-05-17 Online:1988-06-30 Published:1988-06-30

摘要/Abstract

摘要： 用Du Mond图解法分析了利用双晶衍射术测量晶片曲率半径的原理.提出了利用(n^v,-n^s)排列,仅用Kα₁辐射测量晶片曲率半径的方法.此方法与通常所采用的(n^s,-n^s)排列,Kα₁,Kα₂双线法相比,灵敏度大大提高,可测量的曲率半径提高了一个量级.利用(n^v,-n^s)排列双晶衍射术测量了硅单晶片经As⁺离子注入后产生的微小弯曲形变.

Abstract: The Dumond graphic method is employed in the analysis of crystal curvature radius measurement. A new method for measuring the curvature radius using the (n^v,-n^s) double-crystal diffractometry with Kα₁ spectrum only is proposed. This method is much more sensitive than the usually used (n^s,-n^s) double-crystal diffractometry with the Ka doublet method. The detectable limit of curvature can be improved about one order of magnitude. The curvature radius of the Si crystal after As⁺ ion implantation is measured by (n^v,-n^s) double-crystal diffractometry.

陈京一, 李润身, 许顺生. 利用(n^V,-n^S)排列双晶衍射术测量晶片的微小弯曲形变[J]. 应用科学学报, 1988, 6(2): 103-108.

CHEN JINGYI, LI RUNSHEN, XU SHUNSHENG. THE MEASUREMENT OF CURVATURE RADⅡ OF SLIGHTLY BENT CRYSTALS BY (n^V,-n^S)DOUBLE-CRYSTAL DIFFRACTOMETRY[J]. Journal of Applied Sciences, 1988, 6(2): 103-108.