English

应用科学学报 ›› 1989, Vol. 7 ›› Issue (1): 57-60.

• 论文 • 上一篇    下一篇

双离子注入增强退火效应的研究

朱锦良, 程东方, 王良, 蔡仁康   

  1. 上海科学技术大学
  • 收稿日期:1986-03-07 修回日期:1986-12-30 出版日期:1989-03-31 发布日期:1989-03-31

ENHANCED ANNEALING EFFECT OF DOUBLE ION IMPLANTED Si-SUBSTRATE

ZHU JINLIANG, CHENG DONGFANG, WANG LIANG, CAI RENKANG   

  1. Shanghai University of Science and Technology
  • Received:1986-03-07 Revised:1986-12-30 Online:1989-03-31 Published:1989-03-31

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摘要： 本文介绍氩、硼离子注入的增强退火效应.四探针测试显示在500℃左右有低的薄层电阻R值,SEM观察和拉曼谱观察表明,注入区的晶格损伤得到了很好的恢复.

Abstract: The enhanced annealing effect resulting from argon and boron implantation in silicon is described. The small sheet resistance value is obtained by the four-probe measurement at about 500℃. It is observed by SEM and Raman spectroscopy that the radiation damages of crystalline lattices are well recovered.