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应用科学学报 ›› 1989, Vol. 7 ›› Issue (2): 182-184.

• 论文 • 上一篇    下一篇

半导体集成化温度敏感器件的研究

方培生   

  1. 西安交通大学
  • 收稿日期:1986-11-27 修回日期:1987-10-24 出版日期:1989-06-30 发布日期:1989-06-30

AN ACCURATE SEMICONDUCTORIC TEMPERATURE TRANSDUCER

FANG PEISHENG   

  1. Xian Jiaotong University
  • Received:1986-11-27 Revised:1987-10-24 Online:1989-06-30 Published:1989-06-30

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摘要： 以前,人们利用p-n结的正向压降VBE随温度而变化的特性,制作温度敏感器件.最近,国外研制集成化温度敏感器件,克服了单管温度敏感器件,E-B结压降一致性差,灵敏度不够高的缺点.

Abstract: A new semiconductor IC temperature transducer is described. This transducer has the difference Vbe in the pair transistor base-emitter voltages, which is proportional to the absolute temperature. The test results show:the device has high accuracy of ±0.5℃ from -50℃ to 150℃, easy calibration ann low power dissipation.