English

应用科学学报 ›› 1989, Vol. 7 ›› Issue (4): 374-376.

• 论文 • 上一篇    

光致发光法检测用于转移电子器件的GaAs材料

侯庄, 苏九令, 王昌平, 屈逢源   

  1. 复旦大学
  • 收稿日期:1986-03-28 修回日期:1986-08-02 出版日期:1989-12-31 发布日期:1989-12-31

PHOTOLUMINESCENCE OF GaAs FOR TRANSFERRED ELECTRONIC DEVICE

HOU ZHUANG, SU JIULING, WANG CHANGPING, QU FENGYUAN   

  1. Fudan University
  • Received:1986-03-28 Revised:1986-08-02 Online:1989-12-31 Published:1989-12-31

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摘要： 转移电子器件是一种常用的微波固体功率源,制备转移电子器件常用的材料是n-GaAs单晶,目前国内对n-GaAs单晶质量的在线检测主要测量它的电学参数.但是在器件生产中发现,即使用电学参数相同的材料制备器件,仍会出现成品率高低浮动.

Abstract: The photoluminescence of N-GaAg material used to manufacture the transferred electronic device is reported. On condition that there are the same electrical parameters, there exist more complexes of the Ga vacancy and donor impurity in VPE N-GaAs samples for low device yield.