English

应用科学学报 ›› 1990, Vol. 8 ›› Issue (1): 1-5.

• 论文 •    下一篇

As2+注入硅的辐射损伤和退火行为研究

林成鲁, 方子韦, 邢昆山, 倪如山, 邹世昌   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1988-01-11 修回日期:1988-07-27 出版日期:1990-03-31 发布日期:1990-03-31

RADIATION DAMAGE AND ANNEALING BEHAVIOR OF As2+ IMPLANTED SILICON

LIN, FANG ZIWEI, XING KUNSHAN, NI BUSHAN, ZOU SHICHANG   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1988-01-11 Revised:1988-07-27 Online:1990-03-31 Published:1990-03-31

PDF

104

摘要： 本文研究了500keV As2+和250keV As+注入单晶硅引起的辐射损伤及其退火行为.结果表明,As2+注入比As+注入在硅中引入更大的辐射损伤;经快速热退火后,两类注入样品均能消除损伤,获得高的杂质替位率和电激活率;As2+和As+注入样品的载流子浓度的分布有所不同,这是由于As2+注入引入较大辐射损伤引起杂质的快速扩散所致.

Abstract: The radiation damage and annealing behavior of <100> Si implanted with 500 keV As2+ and 250 keV As+ have been investigated. Experimental results show that the damage created by As2+ implantation is greater than that created by As+ implantation. After rapid thermal annealing, the complete recovery from crystal damage, high substitution and electrical activation of implanted atoms can be obtained for both the As2+ and As+ implantations. The carrier concentration profiles are different for the As2+ and As+ Implanted samples, which can be explained by the rapid diffusion of impurities resulting from the serious damage enhancement induced by As2+ implantation.