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应用科学学报 ›› 1991, Vol. 9 ›› Issue (1): 91-94.

• 研究简报 • 上一篇    

硅单晶杂质补偿度对超高反压大功率晶体管耐压特性的影响

吴仲墀1, 钱佑华1, 张维宽2, 罗振华3   

  1. 1. 复旦大学;
    2. 上海无线电七厂;
    3. 上海第二教育学院
  • 收稿日期:1988-11-08 修回日期:1990-01-26 出版日期:1991-03-31 发布日期:1991-03-31

THE EFFECTS OF THE IMPURITY COMPENSATION RATIO IN THE CRYSTALLINE SILICON ON THE VOLTAGE CHARACTERISTIC OF THE TRANSISTOR WITH HIGH POWER AND HIGH BREAKDOWN VOLTAGE

Wu ZHONGCHI1, QIAN YOUHUA1, ZHANG WEIKUAN2, Luo ZHENHUA3   

  1. 1. Fudan University;
    2. Shanghai No.7 Radio Factory;
    3. Shanghai No.2 Education Institute
  • Received:1988-11-08 Revised:1990-01-26 Online:1991-03-31 Published:1991-03-31

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摘要： 超高反压大功率晶体管DF104是电视机的重要电子器件。提高其质量和合格率是发展国产电视机的重要课题之一。在严格的器件设计和工艺条件下,采用低补偿度的优质硅单晶材料,能有效地提高这晶体管的击穿电压及其合格率,从而降低其成本。

关键词: 雪崩击穿, 杂质补偿度, 结区最大电场

Abstract: Experimental results indicate that for the crystalline silicon substrates with basically the same resistivity the lowering of the impurity compensation ratio can effectively raise the breakdown voltage and the end product ratio of the transistor. The empiric formula, which expresses the dependence of the maximum breakdown voltage of the transistors made in a single N-Si wafer on the impurity compensation ratio, is obtained from the experiment. A preliminary analysis is also obtained here.

Key words: maximum electric field in junction depletion layer, avalanche breakdown, impurity compensation ratio