轻掺杂漏LDD MOSFET的工艺及特性

应用科学学报 ›› 1991, Vol. 9 ›› Issue (4): 309-314.

轻掺杂漏LDD MOSFET的工艺及特性

郑庆平, 章倩苓, 阮刚, 陈晓

复旦大学

收稿日期:1988-05-26 修回日期:1988-09-13 出版日期:1991-12-31 发布日期:1991-12-31
基金资助:
国家自然科学基金资助课题

THE TECHNOLOGY AND CHARACTERISTICS OF LDD MOSFET

ZHENG QINGPING, ZHANG QIANLING, RUAN GANG, CHENG XIAO

Fudan University

Received:1988-05-26 Revised:1988-09-13 Online:1991-12-31 Published:1991-12-31

摘要/Abstract

摘要： 对LDD MOSFET的两种形成技术——侧向刻蚀和边墙技术进行了分析和比较,证明了边墙技术对控制轻掺杂区域长度具有更高的精确性;同时,利用边墙技术和全离子注入工艺,在硅栅NMOS工艺基础上,成功地制得了1μm沟道长度的LDD MOSFET.测试结果表明,LDD MOSFET击穿电压高于常规MOSFET 3V以上,同时阈值电压的短沟效应明显减小.这些优点意味着LDD MOSFET结构在VLSI中有着广泛的应用前景.

关键词: 轻掺杂漏金属-氧化物-半导体场效应晶体管, 边墙技术, 短沟道效应

Abstract: Lightly Doped Drain (LDD) MOSFET developed from the conventional MOSFET, is a new structure for MOS devices. Some short channel effects including the hot electron effect in this new structure can be restrained effectively. In this paper a comparison between overcut etching and side wall technology for LDD MOSFET is given. It shows that the side wall technology is a more precise one to control the length of the lightly doped drain region. Combining the side wall technology with the Si-gate NMOS technology, the LDD MOSFET with 1 micrometer channel length is made successfully. The results of test show that the breakdown voltage of LDD MOSFET is higher than that of the conventional MOSFET over 3 volts and the short channel effects of the threshold voltage are restrained obviously. The LDD MOSFET is a suitable structure for VLSI.

Key words: side wall technology, LDD MOSPET (Lightly Doped Drain Metal-Oxide-Semiconductor Field Effect Transistor), short channel effect

郑庆平, 章倩苓, 阮刚, 陈晓. 轻掺杂漏LDD MOSFET的工艺及特性[J]. 应用科学学报, 1991, 9(4): 309-314.

ZHENG QINGPING, ZHANG QIANLING, RUAN GANG, CHENG XIAO. THE TECHNOLOGY AND CHARACTERISTICS OF LDD MOSFET[J]. Journal of Applied Sciences, 1991, 9(4): 309-314.