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应用科学学报 ›› 1991, Vol. 9 ›› Issue (4): 315-322.

• 论文 • 上一篇    下一篇

金属-绝缘层-半导体结构泊松方程的数值解法

吴应前   

  1. 四川大学
  • 收稿日期:1989-07-10 修回日期:1990-01-18 出版日期:1991-12-31 发布日期:1991-12-31

NUMERICAL SOLUTION TO POISSON'S EQUATION FOR MIS STRUCTURE

WU YINGQIAN   

  1. Si shuan University
  • Received:1989-07-10 Revised:1990-01-18 Online:1991-12-31 Published:1991-12-31

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摘要： 详细讨论了金属-绝缘层-半导体结构一维泊松方程的数值解法.推导了非均匀结点下的牛顿迭代公式.提出了边界条件的恰当形式.作为具体应用的实例,由热氧化MOS结构的高频C-V测量曲线进行了数值计算,获得了Ψs-VG关系及界面陷阱密度分布.将这种方法与常用的准静态C-V法作了实验比较,两者的结果符合良好.但前者在制样、测量方面都比后者简单得多,故适合作为工艺监测的常规手段.

关键词: 数值计算法, 金属-绝缘层-半导体结构, 泊松方程, 表面势, 界面陷阱密度

Abstract: The numerical solution to one-dimensional Poisson's equation for MIS structures is described in detail in this paper. Newton's iterated formulation for a nonuniform mesh is derived and the suitable boundary conditions for MIS structures are also presented. As an example of the application of the numerical method, the ΨS-VG relation and the interface trap density are obtained by use of the high frequency C-V characteristic for a MOS structure whose SiO2 film is thermally grown. This method is compared with the quasi-static method experimentally. The results are well agreed, but the former method is much simpler in fabricating and measuring the example. Therefore, this method is suitable for the regular process monitoring.

Key words: surface potential, numerical method, interface trap density, Poisson's equation, MIS structure