硅各向异性腐蚀对偏压依赖和重掺杂停蚀机理的新模型

应用科学学报 ›› 1992, Vol. 10 ›› Issue (2): 167-173.

硅各向异性腐蚀对偏压依赖和重掺杂停蚀机理的新模型

林海安, 张家慰, 陈健

东南大学

收稿日期:1989-09-10 修回日期:1990-06-15 出版日期:1992-06-30 发布日期:1992-06-30

A NEW MODEL FOR THE MECHANISM OF SILICON BIAS-DEPENDENT ETCHING AND HEAUILY DOPED ETCH-STOP

LIN HAIAN, ZHANG JIAWEI, CHEN JIAN

Southeast University

Received:1989-09-10 Revised:1990-06-15 Online:1992-06-30 Published:1992-06-30

摘要/Abstract

摘要： 系统研究了硅各向异性腐蚀对偏压的依赖及重掺杂的影响,建立了液一半接触能带模型和界面电荷传递模型,提出了反应注入概念且指出腐蚀速度通常依赖于界面态的填充情况,合理解释了实验得到的蚀速-偏压关系.考虑到非平衡载流子复合后,得到与实验吻合的蚀速比-载流子浓度公式.

关键词: 液-半接触, 界面态填充, 硅各向异性腐蚀, 反应注入

Abstract: In this paper, the dependence of anisotropic silicon etching on bias-voltage and the influence of heavy doping are studied in detail. Two models of liquid-semiconductor contact energy band and transport of interface changes are set up. The concept of reaction implantation is put forward. Meanwhile, it is considered that the etching rate usually depends on the filling conditions of the interface state. The relations of experimental etching rate and bias-voltage are explained correctly. Finally, after considering the recombination of disequilibrium carriers, the etching rate carrier concentration formula is found to be in good agreement with experimental data.

Key words: anisotropio silicon etching, liquid-semiconduotor contact, reaction implanbation, interface state filling

林海安, 张家慰, 陈健. 硅各向异性腐蚀对偏压依赖和重掺杂停蚀机理的新模型[J]. 应用科学学报, 1992, 10(2): 167-173.

LIN HAIAN, ZHANG JIAWEI, CHEN JIAN. A NEW MODEL FOR THE MECHANISM OF SILICON BIAS-DEPENDENT ETCHING AND HEAUILY DOPED ETCH-STOP[J]. Journal of Applied Sciences, 1992, 10(2): 167-173.