English

应用科学学报 ›› 1993, Vol. 11 ›› Issue (1): 31-36.

• 论文 • 上一篇    下一篇

采用SF6+O2反应离子刻蚀聚酰亚胺膜

孙承龙, 杜根娣, 郭方敏, 陈思琴, 林绥娟, 胡素英   

  1. 中国科学院上海冶金研究所, 中国科学院传感技术联合开放国家实验室
  • 收稿日期:1991-03-07 修回日期:1992-03-08 出版日期:1993-03-31 发布日期:1993-03-31

REACTIVE ION ETCHING OF POLYIMIDE FILM USING SF6 +O2

SUN CHENGLONG, DU GENDI, GUO FANGMIN, CHEN SIQIN, LIN SUIJUAN, HU SUYING   

  1. Shanghai Institute of Metallurgy, State Key Laboratories of Transducer Techndology, Acadeinia Sinica
  • Received:1991-03-07 Revised:1992-03-08 Online:1993-03-31 Published:1993-03-31

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摘要： 报道了在O2或SF6+O2混合气体中反应离子刻蚀聚酰亚胺的基本原理.使用牛津等离子科技公司的Plasmalab μp型刻蚀仪,对厚度0-4μm的聚酰正胺膜,进行各向异性的刻蚀,获得了侧墙陡直的微细图形.

关键词: 反应离子刻蚀, 聚酰亚胺, 侧墙

Abstract: We report the principle of reactive ion etching of the polyimide film in piire O2 or SF6 + O2 mixed gases plnsmas. Anisotropic etching techniques are used to etch the polyiroide film whose thickness is 0-4μm. Excellent patterns with straight sidewalls are obtained. The equipment used in the etching process is the Plasraalab Up Etcher made by Oxford Plasma Technology Ltd (UK).

Key words: polyimide, sidewall, reactive ion etching