English

应用科学学报 ›› 1993, Vol. 11 ›› Issue (1): 5-10.

• 论文 • 上一篇    下一篇

电子束蒸发的α-Si1-xCox薄膜的光吸收特性

甘润今, 张仿清, 张津燕, 陈光华   

  1. 兰州大学
  • 收稿日期:1991-04-17 修回日期:1991-08-10 出版日期:1993-03-31 发布日期:1993-03-31

OPTICAL ABSORPTION OF ELECTRON-BEAM EVAPORATED a-Si1-xCox FILMS

GAN RUNJING, ZHANG FANGQING, ZHANG JINYAN, CHEN GUANGHUA   

  1. Lanzhou University
  • Received:1991-04-17 Revised:1991-08-10 Online:1993-03-31 Published:1993-03-31

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摘要： 研究了电子束蒸发的掺过渡金属Co的非晶硅基薄膜α-Si1-xCox的光吸收特性,结果表明,这类薄膜的组分变化,对近红外长波的吸收特性影响灵敏.0.10at% < x < 2.00at%的组分变化区,是薄膜先吸收特性变化的灵敏区.在研究的组分范围内,薄膜的光学带隙随组分的增大而变窄,由1.50eV减小到1.28eV.实验结果用Cody等人建立的有关α-Si的无序理论进行了分析讨论.

关键词: 光吸收, 非晶硅薄膜, 光学带隙, 过渡金属

Abstract: The optical absorption properties of electron-beam-evaporated α-Si1-xCox films have been atudied. The result shows that the changes of the component x in the films affect the optical absorption in the long wave approaching that of the infrared more sensitively than in the short wave; the sensitive region of the optical absorption is in the 0.10 at% < x < 2.00 at% region. In the investigated components, when the component a; increases, the optical band gap of the film narrows from 1.50 eV to 1.28 eV. The experimental result is analysed and discussed with Cody's disorder theory of a-Si film.

Key words: optical absorption, transition element, α-Si film, optical band gap