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应用科学学报 ›› 1993, Vol. 11 ›› Issue (3): 253-257.

• 论文 • 上一篇    下一篇

同时形成用于浅结器件的TiNxOy/TiSi2的热稳定性

陈存礼1, 宋海智1, 华文玉2   

  1. 1. 南京大学;
    2. 华东工学院
  • 收稿日期:1991-07-25 修回日期:1991-12-18 出版日期:1993-09-30 发布日期:1993-09-30
  • 基金资助:
    高纯硅及硅烷国家实验室基金资助项目

THERMAL STABILITY OF SIMULTANEOUSLY FORMED TiNxOy/TiSi2 FOR SHALLOW JUNCTION DEVICE APPLICATIONS

CHEN CUNLI1, SONG HAIZHI1, HUA WENYU2   

  1. 1. Nanjing University;
    2. East China Institute of Technology
  • Received:1991-07-25 Revised:1991-12-18 Online:1993-09-30 Published:1993-09-30

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摘要： 用900℃15秒快速热退火使硅上钛膜在高纯NH3中同时形成TiNxOy/TiSi2双层结构.研究了TiNxOy作为Al的扩散势垒的有效性.结果表明,Al/TiNxOy/TiSi2/Si接触系统直至550℃在N2中烧结30分钟仍然具有良好的热稳定性.

关键词: 快速热退火, 钛硅化物, 扩散势垒

Abstract: A TiNxOy/TiSi2 bilayer structure is formed simultaneously for Ti film on Si by rapid thermal annealing at 900℃ for 15s in highly pure NH3. The effectiveness of TiNxOy as a diffusion barrier layer for Al has been studied. Eesults show that the Al/TiNxOy/TiSi2/Si contact system has good thermal stability, when Bintered in N2, up to 550℃ for 30min.

Key words: diffusion barrier, rapid thermal annealing, titanium silicide