半导体PN结光电成像

应用科学学报 ›› 1994, Vol. 12 ›› Issue (4): 379-386.

半导体PN结光电成像

郭亮¹, 张仲宁¹, 张淑仪¹, 谢云²

1. 南京大学;
2. 江苏劳动保护研究所

收稿日期:1992-07-06 修回日期:1993-04-01 出版日期:1994-12-31 发布日期:1994-12-31
基金资助:
工业部基础技术研究基金

PHOTOELECTREC IMAGING OF SEMICONDUCTOR P-N JUNCTIONS

GUO LIANG¹, ZHANG ZHONGNING¹, ZHANG SHUYI¹, XIE YUN²

1. Nanjing University;
2. Jiangsu Institute of Labour Protection

Received:1992-07-06 Revised:1993-04-01 Online:1994-12-31 Published:1994-12-31

摘要/Abstract

摘要： 该文描述半导体PN结,在不同偏置电压下,受强度调制光照射时,产生的光生电压的测量结果,并对PN结进行了静态(非工作状态)和动态(外加工作电压)光电成像。从理论上探讨了PN结光电成像的物理机制,得到了PN结光电成像的一般规律,由此为集成电路等半导体器件进行静态或动态光电成像检测及分析提供依据。

关键词: 半导体PN结, 光电效应, 光电成像

Abstract: The results of the photovoltaic detection of P-N junctions with different bias voltages under the illumination of periodically modulated laser are presented in experiment and theory. The static and dynamic photovoltaic images of semiconductor P-N junction devices are obtained by photoelectric microscopy.The studies of the phybsical mechanism of the photovoltaic detection of semicon-ductor P-N junctions provide effectively the analytical foundations of the static and dynamic photovoltaic images of integrated circuits.

Key words: semiconduetor P-N junctions, photoelectric effect, photoelectic imaging

郭亮, 张仲宁, 张淑仪, 谢云. 半导体PN结光电成像[J]. 应用科学学报, 1994, 12(4): 379-386.

GUO LIANG, ZHANG ZHONGNING, ZHANG SHUYI, XIE YUN. PHOTOELECTREC IMAGING OF SEMICONDUCTOR P-N JUNCTIONS[J]. Journal of Applied Sciences, 1994, 12(4): 379-386.