S-GaAs表面键对砷化镓电性能的影响

应用科学学报 ›› 1994, Vol. 12 ›› Issue (4): 395-400.

S-GaAs表面键对砷化镓电性能的影响

张桂樯, 蔡颂仪, 朱永强, 曹永明

复旦大学

收稿日期:1992-10-17 修回日期:1993-03-31 出版日期:1994-12-31 发布日期:1994-12-31
基金资助:
国家自然科学基金

EFFECT OF S-GaAs SURFACE BONDS ON GaAs ELECTRONIC PROPERTY

ZHANG GUIQIANG, CAI SONGYI, ZHU YONQIANG, CAO YONGMING

Fudan Universiry

Received:1992-10-17 Revised:1993-03-31 Online:1994-12-31 Published:1994-12-31

摘要/Abstract

摘要： 砷化镓表面经硫化钠水溶液处理后,其电学性能得到很好的改善。实验样品的电容电压特性曲线发生变化,势垒电容变大。X射线光电子谱揭示样品表面氧的成分大大减少,砷的结合能由原来的1321.47eV变为1321.00eV,As (2P_3/2)芯能级移位0.47eV。砷化镓表面形成S-As键,改善了表面费米能级的钉札,减少了表面态密度及表面复合中心。

关键词: 硫化钠处理, X光电子谱, 二次离子质谱

Abstract: The electronic properties of GaAa are dramatically improved in samples treated with aqueous solntion of sodinm sulfide nonahydrate (Na₂S·9H₂O).Experimental results show that the characteristic curves of capacitance-voltage (C-V) vary shape for the Na₂S·9H₂O treated samples, and that its potential barrier capacitance is higher than that of the untreated sample. The X-ray phtoelectron spectroscopy (XPS) reveals that the oxygen on the GaAs surface treated with Na₂S·9H₂O is remarkably removed, and that the peak of the binding energy of As varies from the background peak 1321.00 eV to 1321.47 eV, a shift of 0.47 ey. The sulfur depth profile on the GaAs surface is determined by the secondary ion masss pectroscopy (SIMS). New S-As bonds and compound of arsenic sulfide are formed on the GaAs surface, making the "pinned" Fermi level improved. The surface state density and surface recombination center on the sodium salfide treatment sample have been greatly reduced, which is favorable for controlling the charge in GaAs.

Key words: SIMS, aqueous solution of sodium sulfide nonahydrate, XPS

张桂樯, 蔡颂仪, 朱永强, 曹永明. S-GaAs表面键对砷化镓电性能的影响[J]. 应用科学学报, 1994, 12(4): 395-400.

ZHANG GUIQIANG, CAI SONGYI, ZHU YONQIANG, CAO YONGMING. EFFECT OF S-GaAs SURFACE BONDS ON GaAs ELECTRONIC PROPERTY[J]. Journal of Applied Sciences, 1994, 12(4): 395-400.