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应用科学学报 ›› 1994, Vol. 12 ›› Issue (4): 401-408.

• 论文 • 上一篇    下一篇

CoSi2/Si结构中杂质离子注入及自对准硅化物MOS器件技术

刘平1,2, 李炳宗1,2, 黄维宁1,2, 姜国宝1,2, 顾志光1,2   

  1. 1. 复旦大学;
    2. 中国科学院上海冶金研究所离子束开放研究实验室
  • 收稿日期:1992-06-15 修回日期:1992-12-13 出版日期:1994-12-31 发布日期:1994-12-31

ION IMPLANTATlON THROUGH CoSi2/Si AND SELF-ALIGNED SILICIDED MOS DEVICE TECHNOLOGY

LIU PING1,2, LI BINGZONG1,2, HUANG WEINING1,2, JIANG GUOBAO1,2, GU ZHIGUANG1,2   

  1. 1. Fudan University;
    2. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences
  • Received:1992-06-15 Revised:1992-12-13 Online:1994-12-31 Published:1994-12-31

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摘要： 研究了一种新型自对准硅化物MOS晶体管制备技术,通过Co/Si固相反应在源漏区和栅电极表面形成一层自对准的低电阻率CoSi2薄膜,在CoSi2/Si结构中进行杂质离子注入,用计算机模拟程序对离子注入杂质分布及损伤进行计算,选择适当的注入能量,使注入的杂质浓度峰值位于CoSi2/Si界面附近,经快速退火,可获得界面载流子浓度较高、性能优良的增强型和耗尽型NMOS晶体管。该文还研究了注入在CoSi2/Si结构中的杂质在不同的热处理条件下的分布变化,结果表明,磷在热处理过程中,存在向硅衬底较强的扩散趋势,而硼则明显不同。

关键词: MOS晶体管, 快速退火, 离子注入, 界面

Abstract: A new technology for the fabrication of self-aligned silicided MOS transistors was investigated. Self-aligned highly conductive CoSi2 films were formed on the areas of the source/drain and gate electrode by solid state reaction of Co/Si.Dopants were implanted through CoSi2/Si. The dopant and damage depth profiles were calculated by the eomputer program TRIM. The ion energy was properly selected to make the peak of dopant concentration locate at the interface of CoSi2/Si. By a rapid thermal annealing after implantation, high-performance enhanced and depletion MOS transistors were fabricated with high carrier concentrations at the interface of CoSi2/Si. The redistribution of the implanted dopants in the structure of CoSi2/Si during different thermal processes was also studied. The results show that phosphorous has the tendency of diffusing into Si substrate, but boron prefers to stay in CoSi2.

Key words: interface, rapid thermalannealing, MOS transistor, ion implantation