English

应用科学学报 ›› 1995, Vol. 13 ›› Issue (1): 21-28.

• 论文 • 上一篇    下一篇

二氧化硅簿膜驻极体的电荷动态特性

夏钟福1, 吕美安1, P Guenther2, 施林生2   

  1. 1. 同济大学玻尔固体物理研究所;
    2. 德国塔姆斯达特技术大学
  • 收稿日期:1993-03-01 修回日期:1993-10-07 出版日期:1995-03-31 发布日期:1995-03-31
  • 基金资助:
    国家自然科学基金,中德合作课题

CHARGE DYNAMICS OF SILICON DIOXIDE ELECTRETS

XIA ZHONGFU1, LU METAN1, P Guenther2, SHI LINSHENG2   

  1. 1. Pohl lnstitute, Tongji University;
    2. Technical University of Darmstadt, Germany
  • Received:1993-03-01 Revised:1993-10-07 Online:1995-03-31 Published:1995-03-31

PDF

104

被引次数

2

摘要： 系统地研究了二氧化硅薄膜驻极体的负表面电荷和正表面与体电荷受激脱阱后在体内的输运规律。并考察了这种驻极体的放电特性,化学表面处理对该驻极体的电荷稳定性及电荷层在体内的迁移规律的影响。充电后的适当老化程序,可使电荷重心从样品的自由面附近向体内迁移,由此导致的二氧化硅的体内负电荷具有极好的稳定性。这一结果对正在研制中的二氧化硅微型传感器的质量改善是十分重要的。

关键词: 化学表面处理, 驻极体, 老化, 电荷输运, 二氧化硅

Abstract: In this paper,the transport rule of detrapped charges (either negative surface charges or positive surface and bulk charges) in the bulk of the silicon dioxide film electrets was systematically studied. The discharge behavior of silicon dioxide electret,the influence of chemical surface treatment on charge stability and the shift of charge layer in the bulk for SiO2 were investigated. The mean charge depth can be shifted from the near free surface into the bulk of SiO2 by control-ling the ageing temperature. The negative charges in the bulk of silicon dioxide have excellent stability,which is a very important result for the study being done about the improvement of quality for SiO2 micro-sensors.

Key words: silicon dioxide, ageing, chemical surface treatment, electret, charge transport