背面引线压力/氢离子敏传感器的研究

应用科学学报 ›› 1995, Vol. 13 ›› Issue (3): 359-362.

背面引线压力/氢离子敏传感器的研究

牛蒙年, 林崴, 袁璟

东南大学

收稿日期:1993-09-13 修回日期:1994-04-02 出版日期:1995-09-30 发布日期:1995-09-30

INVESTIGATIONS OF AN INTEGRA TED BACKSIDE CONTACT PRESSURE/PH-ISFET SENSOR

NIU MENGNIAN, LIN WEI, YUAN JING

Southeast University

Received:1993-09-13 Revised:1994-04-02 Online:1995-09-30 Published:1995-09-30

摘要/Abstract

摘要：

报道了一种含微参比电极的差分结构,并可与其它敏感元和信号处理电路完全隔离的背面引线氢离子敏感场效应(pH-ISFET)新结构。基于硅的固相键合技术和硅微机械加工技术以及常规N阱MOS工艺,研制成集成压力/pH-ISFET传感器,设计制作了高稳定的可调芯片自恒温系统,经实际工艺流水制成了样管,初步的测量结果证实了这种背面引线、微参比电极、全集成的新结构设计是成功的。

关键词: 背面引线, 集成传感器, 微参比电极, H⁺离子敏, 压力敏

Abstract:

A novel backside contact dual pH-ISFET structure with its microreference electrode which can be completely isolated from other sensitive elemcnts and signal conditioning circuits is presented in this paper.Based on the silicon bonding method, silicon micromechanical technique and standard N-well biMOS compatible process,an integrated pressure/pH-ISFET sensor is developed.A highly stsble Chip-Temperature-Constant system is also designed and developed.Measurement prove;the possibility of the new structure and good characteristics of the sensor.

Key words: Pressure, Integrated Sensor, backside contact, microreference electrode, pH-ISFET

牛蒙年, 林崴, 袁璟. 背面引线压力/氢离子敏传感器的研究[J]. 应用科学学报, 1995, 13(3): 359-362.

NIU MENGNIAN, LIN WEI, YUAN JING. INVESTIGATIONS OF AN INTEGRA TED BACKSIDE CONTACT PRESSURE/PH-ISFET SENSOR[J]. Journal of Applied Sciences, 1995, 13(3): 359-362.