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应用科学学报 ›› 1997, Vol. 15 ›› Issue (1): 82-88.

• 论文 • 上一篇    下一篇

双层多晶硅FlotoxEEPROM单元的优化设计

于宗光1, 许居衍1, 王鸿宾1, 魏同立2   

  1. 1. 华晶集团中央研究所;
    2. 东南大学
  • 收稿日期:1995-12-20 修回日期:1996-05-08 出版日期:1997-03-31 发布日期:1997-03-31
  • 作者简介:于宗光:高工,中国华晶集团公司中央研究所,江苏无锡208信箱 214035
  • 基金资助:
    江苏省青年科技基金

OPTIMIZA TION DESIGN OF TWO-POLY SILICON FLOTOX EEPROM CELL

YU ZONGGUANG1, Xu JUYAN1, WANG HONGBIN1, WEI TONGLI2   

  1. 1. Central Research Institute, Hua Jing Group Co, Wuxi, 214035;
    2. Microelectronic Research Centre, Sotheast University, Nanjing, 210096
  • Received:1995-12-20 Revised:1996-05-08 Online:1997-03-31 Published:1997-03-31

PDF

85

被引次数

8

摘要： 建立了双层多晶硅flotoxEEPEOM存储管的阈值电压模型,利用该模型研究了擦/写阈值与擦/写时间、编程电压、隧道孔面积、隧道氧化层厚度的关系,采用1.4μm CMOS工艺设计了双层多晶硅flotox单元。模拟结果和实验结果基本一致,该阈值电压模型为EEPEOM单元的优化设计提供了一种快速、简便、实用的准则。

关键词: EEPROM, 阈值电压, 浮栅隧道氧化物, 模型

Abstract: In this paper, the model of two-polysilicon folotox EEPROM threshold voltage model has been established. Then, the relatioa between erase/write tbredbold voltage and erase/write time, programing voltage, tunnel area, folox thickness have been studied based on this model. Tbe two-polysilicon fotox EEPROM cell has beea designed The experiment reaults are approximately-concordant with the sizaulation results. So, the thresbold model can be used as a fast, sim ple, actual ruler for EEPROM cell optimization deaign.

Key words: model, floating-gate tunnel oxide, EEPROM, threshold voltage