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应用科学学报 ›› 1997, Vol. 15 ›› Issue (4): 424-428.

• 论文 • 上一篇    下一篇

InGaAs MSM-PD肖特基势垒增强层的研究

朱红卫, 史常忻, 陈益新   

  1. 上海交通大学
  • 收稿日期:1996-03-20 修回日期:1996-09-27 出版日期:1997-12-31 发布日期:1997-12-31
  • 作者简介:朱红卫:讲师,上海交通大学微电子技术研究所,上海 200030
  • 基金资助:
    国家自然科学基金;中国科学院上海冶金所信息功能材料国家重点实验室部分资助

THE RESEARCH OF InGaAs MSM-PD SCHOTTKY BARRIER ENHANCEMENT LAYER

ZHU HONGWEI, SHI CHANGXIN, CHEN YIXIN   

  1. Shanghai Jiao Tong University, Shanghai 200030
  • Received:1996-03-20 Revised:1996-09-27 Online:1997-12-31 Published:1997-12-31

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76

被引次数

2

摘要： 通过在n型InGaAs光吸收层与金属接触间加入p型InGaAs势垒增强层的方法,来提高势垒高度,使其暗电流大为下降,并对其进行了理论和实验研究.

关键词: 光电探测器, 势垒增强层

Abstract: It is shown in this paper that the dark current of InGaAs MSM photodetectors can be greatly reduced with the structure of p-InGaAs Schottky barrier enhanccmcnt layer. Theoretical explanation is given and the lowest dark currents with the order of 10-11 A are obtained in our experiments.

Key words: photodetector, barrier enhancement layer