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应用科学学报 ›› 2000, Vol. 18 ›› Issue (3): 255-258.

• 论文 • 上一篇    下一篇

硼离子注入对硅基Si3N4薄膜驻极体性质的影响及力学性能的改善

张晓青1, 夏钟福1, 潘永刚1, 张冶文1, 李宝清2, 林梓辛2   

  1. 1. 同济大学波耳固体物理研究所, 上海 200092;
    2. 中国科学院上海冶金研究所, 上海 200050
  • 收稿日期:1999-08-09 修回日期:1999-12-12 出版日期:2000-09-30 发布日期:2000-09-30
  • 作者简介:张晓青(1972-),女,陕西西安人,博士生;夏钟福(1939-),男,安徽肥东人,教授,博导.
  • 基金资助:
    国家自然科学基金资助项目(59682003);中科院离子束开放研究实验室课题资助项目(翻离子注人对Si3N4薄膜驻极体性能的改善)

Influence of Boron Ion Implantation on the Electret Properties and Mechanic Properties of Si3N4 Film Based on Silicon Substrate

ZHANG Xiao-qing1, XIA Zhong-fu1, PAN Yong-gang1, ZHANG Ye-wen1, LI Bao-qing2, LIN Zi-xin2   

  1. 1. Pohl Institute, Tongji University, Shanghai 200092, China;
    2. Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • Received:1999-08-09 Revised:1999-12-12 Online:2000-09-30 Published:2000-09-30

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摘要： 利用硼离子B+注入方法来改善Si3N4薄膜的力学性质,并就B+注入对Si3N4薄膜驻极体性质的影响进行了较为系统的研究.实验结果表明,B+注入能够有效地降低薄膜的内应力,而对薄膜的驻极体性质有不利的影响;用化学表面修正能够在一定程度上提高材料的抗恶劣环境能力。

关键词: 氮化硅薄膜, 硼离子注入, 驻极体, 内应力

Abstract: Amorphous silicon nitride (Si3N4) film has outstanding electret properties and it is compatible with the micromachining technology, so it can be used in miniature microphone. But big tensile stress of Si3N4 film limits its application. In this paper, the improvement of mechanical property of Si3N4 film by boron ion implantation and its influence on the electret properties of the film is discussed. The results show that the boron ion plantation reduces the tensile stress of film effectively,but it also decreases the electret properties of the film. The capability of Si3N4 electret film against environmental conditions can be increased by chemistrical surface modification. Therefore, Si3N4 film may be used as a vibrating film. After the stability of charge storage is improved,it may be used as electret material for miniature microphones.

Key words: silicon nitride film, electret, boron ion implantation, internal stress

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