超薄基区SiGe HBT基区渡越时间模型

应用科学学报 ›› 2000, Vol. 18 ›› Issue (3): 259-262.

超薄基区SiGe HBT基区渡越时间模型

李垚¹, 廖小平², 吴晓洁³, 魏同立², 许居衍³

1. 中国科技大学物理系, 安徽合肥 230026;
2. 东南大学微电子中心, 江苏南京 210096;
3. 东南大学无锡应用科学与工程研究院, 江苏无锡 214071

收稿日期:1999-06-22 修回日期:1999-10-29 出版日期:2000-09-30 发布日期:2000-09-30
作者简介:李垚(1968-),男,安徽合肥人,副研究员,博士;许居衍(1934-)男,福建福州人,院士.

A Base Transit Time Model for Ultra-thin-base SiGe HBT

LI Yao¹, LIAO Xiao-ping², WU Xiao-jie³, WEI Tong-li², XU Ju-yan³

1. Department if Physics, University of Science and Technology of China, Hefei 230026, China;
2. Microelectronic Center, Southeast University, Nanjing 210018, China;
3. Wuxi Research Institute of Applied Science and Engineering of Southeast University, Wuxi 214071, China

Received:1999-06-22 Revised:1999-10-29 Online:2000-09-30 Published:2000-09-30

摘要/Abstract

摘要： 通过分析SiGe HBT超薄基区中非平衡效应对载流子温度,扩散系数等参量的影响,建立了超薄SiGe HBT基区渡越时间模型。

关键词: SiGe异质结双极晶体管, 超薄基区, 基区渡越时间

Abstract: The influences of non-equilibrium effect on the carrier temperature and diffusion coefficient in the ultra-thin-base SiGe HBT are analyzed in this paper. This leads to the forming of a base transit time model for ultra-thin-base SiGe HBT.

Key words: SiGe HBT, ultra-thin base, base transit time

中图分类号:

TN402

李垚, 廖小平, 吴晓洁, 魏同立, 许居衍. 超薄基区SiGe HBT基区渡越时间模型[J]. 应用科学学报, 2000, 18(3): 259-262.

LI Yao, LIAO Xiao-ping, WU Xiao-jie, WEI Tong-li, XU Ju-yan. A Base Transit Time Model for Ultra-thin-base SiGe HBT[J]. Journal of Applied Sciences, 2000, 18(3): 259-262.