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应用科学学报 ›› 2003, Vol. 21 ›› Issue (2): 187-192.

• 论文 • 上一篇    下一篇

PDP选址驱动芯片的设计与实现

吴建辉, 孙伟锋, 陆生礼   

  1. 东南大学国家ASIC系统工程中心 江苏 南京 210096
  • 收稿日期:2002-05-29 修回日期:2002-07-23 出版日期:2003-06-10 发布日期:2003-06-10
  • 作者简介:吴建辉(1966-),男,安徽橄县人,副教授,博士
  • 基金资助:
    江苏省"十五"科技攻关资助项目(BG2000010-4)

The Design and Approach for PDF Data Driver IC

WU Jian-hui, SUN Wei-feng, LU Sheng-li   

  1. National ASIC System Engineering Center, Southeast University, Nanjing 210096, China
  • Received:2002-05-29 Revised:2002-07-23 Online:2003-06-10 Published:2003-06-10

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摘要： 设计出一种适合PDP选址驱动芯片的HV-NDMOS结构,分析了该结构的防穿通特性.提出了实现PDP选址驱动芯片的工艺流程及其基本参数;同时提出了HV-PMOS的厚栅氧刻蚀方法——多晶硅栅自对准刻蚀.文中最后对流水出的芯片进行了测试分析,证明所设计的芯片确实能满足实际要求。

关键词: 等离子体平板显示, 高压CMOS, 高压NDMOS, 自对准, 选址驱动

Abstract: A new structure of HV-NDMOS (high voltage N-channel lateral double-diffused MOSFET) for PDF data driver IC is presented, and the advantage of avoiding punch-through is discussed. The processes and the basic parameters for PDF date drive IC are proposed. At the same time, a novel technique, polycrystalline silicon self-aligned etching used to etch the thick gate oxide of HV-PMOS (high voltage P-channel MOSFET) is also demonstrated. Finally, the test and analyses for the IC are carried out, and this proves that the designed IC can meet practical needs.

Key words: plasma display panel (PDF), data drive, self-aligned, HV-NDMOS, HV-CMOS

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