小尺寸功率VDMOS晶体管中准饱和效应的研究

应用科学学报 ›› 2005, Vol. 23 ›› Issue (4): 380-383.

小尺寸功率VDMOS晶体管中准饱和效应的研究

张珺, 程东方, 徐志平

上海大学微电子研究与开发中心, 上海 200072

收稿日期:2004-03-31 修回日期:2004-06-02 出版日期:2005-07-31 发布日期:2005-07-31
作者简介:张珺(1978-),女,浙江安吉人,硕士,E-mail:polojoan@sohu.com.

Investigation of Quasi-saturation Effect in Small Size Power VDMOS

ZHANG Jun, CHENG Dong-fang, XU Zhi-ping

Microelectronic Research & Development Center, Shanghai University, Shanghai 200072, China

Received:2004-03-31 Revised:2004-06-02 Online:2005-07-31 Published:2005-07-31

摘要/Abstract

摘要： 分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因,并对其进行了理论证明和模拟验证.研究结果表明,在晶体管导通状态下,由于寄生JFET电阻R_j和MOS沟道电阻R_ch的分压作用,致使在MOS沟道内载流子漂移速度由饱和变为不饱和,而在寄生JFET沟道中载流子漂移速度由不饱和变为饱和,造成器件在高栅源电压V_GS时,器件漏端电流I_DS大小与栅源电压V_GS无关,从而形成准饱和效应.

关键词: VDMOS, 导通电阻, 准饱和效应

Abstract: In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.Due to the resistance distribution of R_j and R_ch in the device, carriers' drift velocity in MOS channel changes from saturation to unsaturation while the carriers' drift velocity in the autoecious JFET channel changes from unsaturation to saturation.When the device is in high V_GS, I_DS is independent of V_GS, resulting in the quasi-saturation effect.

Key words: on-resistance, VDMOS, quasi-saturation effect

中图分类号:

TN386

张珺, 程东方, 徐志平. 小尺寸功率VDMOS晶体管中准饱和效应的研究[J]. 应用科学学报, 2005, 23(4): 380-383.

ZHANG Jun, CHENG Dong-fang, XU Zhi-ping. Investigation of Quasi-saturation Effect in Small Size Power VDMOS[J]. Journal of Applied Sciences, 2005, 23(4): 380-383.