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应用科学学报 ›› 2005, Vol. 23 ›› Issue (6): 604-609.

• 论文 • 上一篇    下一篇

高压功率VDMOST的SPICE直流模型

赵野, 孙伟锋, 易扬波, 鲍嘉明   

  1. 东南大学国家专用集成电路系统工程技术研究中心, 江苏南京 210096
  • 收稿日期:2004-07-18 修回日期:2004-11-12 出版日期:2005-11-30 发布日期:2005-11-30
  • 作者简介:赵野(1977-),男,辽宁绥中人,博士生,E-mail:zhaoye@seu.edu.cn
  • 基金资助:
    国家"863"高技术研究发展计划资助项目(2003AA1Z1400)

A DC Model of High-Voltage VDMOST for SPICE Simulation

ZHAO Ye, SUN Wei-feng, YI Yang-bo, BAO Jia-ming   

  1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
  • Received:2004-07-18 Revised:2004-11-12 Online:2005-11-30 Published:2005-11-30

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101

被引次数

3

摘要： 基于高压VDMOST的物理机理和特殊结构,详细分析、推导了漂移区电阻、埋层电阻、内部节点电压及内部耗尽层宽度随外加偏压变化而变化的情形;采用数值计算的方法,建立了较精确的高压六角型VDMOST三维物理模型,进而提出了VDMOST的直流(DC)等效电路模型.该模型由level3 NMOS管、控制源、电容等元件组成,较准确地模拟了高压器件的特性.与以往文献的结果相比,该模型物理概念清晰,准确性高,避免过多工艺参数引入的同时,简化了等效电路.将该模型嵌入SPICE进行仿真,得到了全电压范围内连续的I-V特性曲线,与实际测试结果相比,误差接近5%.

关键词: 高压集成电路, 漂移区, 高压VDMOST, 等效电路, 模型

Abstract: An accurate model for high-voltage hexagon VDMOST is derived based on a three-dimensional structure and implemented with SPICE.Drift region resistance, buried layer resistance, interior node voltage and variation of internal capacitance with external applied voltage are analyzed in detailed.A DC equivalent circuit model is also proposed, which includes a level 3 NMOS transistor, a controlled source and capacitance, etc.It also accounts for the quasi-saturation effect in high voltage device.This simple model with a clear physical concept also provides easy extraction of inter-electrode capacitances.The I-V simulation results are in good agreement with experimented results with the DC error approaching 5%within the entire voltage range, which can be used in practical applications.

Key words: HVIC, high-voltage VDMOST, model, drift region, equivalent circuit

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