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应用科学学报 ›› 2006, Vol. 24 ›› Issue (4): 372-376.

• 论文 • 上一篇    下一篇

深亚微米工艺CMOS Gilbert混频器噪声分析

唐守龙, 吴建辉, 罗岚   

  1. 东南大学国家专用集成电路系统工程技术研究中心, 江苏南京 210096
  • 收稿日期:2005-03-30 修回日期:2005-05-23 出版日期:2006-07-31 发布日期:2006-07-31
  • 作者简介:唐守龙,博士生,研究方向:射频集成电路设计技术研究,E-mail:tangshl@seu.edu.cn

Noise in Deep Submicron CMOS Gilbert Mixers

TANG Shou-long, WU Jian-hui, LUO Lan   

  1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
  • Received:2005-03-30 Revised:2005-05-23 Online:2006-07-31 Published:2006-07-31

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摘要： 深入研究了深亚微米工艺下的CMOS Gilbert混频器噪声产生机理,提出了深亚微米工艺下的混频器噪声系数性能解析模型.基于0.25μm标准CMOS工艺的Gilbert混频器仿真结果表明,该预测的噪声系数理论值与仿真结果相差最大为1.5 dB,相对误差最大为12.5%.

关键词: CMOS射频集成电路, 深亚微米工艺, 混频器, 噪声

Abstract: The noise behavior of deep sub micron CMOS Gilbert mixers is investigated.An analytical noise figure model of the mixers is derived.Prediction based on the analysis is compared with simulation results based on 0.25 μm CMOS technology.The maximum absolute prediction error is less than 1.5 dB and the relative prediction error is less than 12.5%.The technique is useful in providing a guide to the design of CMOS mixer.

Key words: mixer, deep submicron technology, noise, CMOS RF IC

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