真空电弧沉积簿膜厚度分布计算

应用科学学报 ›› 1995, Vol. 13 ›› Issue (3): 339-346.

真空电弧沉积簿膜厚度分布计算

王浩¹, 邹积岩¹, 杨磊¹, 程礼椿¹, 欧阳红林²

1. 华中理工大学;
2. 湖南大学

收稿日期:1993-10-25 修回日期:1994-04-01 出版日期:1995-09-30 发布日期:1995-09-30
基金资助:
国家教委资助项目

CALCULATION OF FILM THICKNESS DISTRIBUTION PROVIDED BY VACUUM ARC DEPOSITIONWANG

WANG HAO¹, ZOU JIYAN¹, YANG LEI¹, CHENG LICHUN¹, OUYANG HONHLIN²

1. Huazhong University of Science & Techcology;
2. Hunan University

Received:1993-10-25 Revised:1994-04-01 Online:1995-09-30 Published:1995-09-30

摘要/Abstract

摘要： 该文从离子电流密度空间分布函数的角度出发,针对自由电弧沉积和磁场控制电弧沉积两种情况,分别提出了单斑点和多斑点计算模型,进行了平面基片上真空电弧沉积的金属薄膜厚度分布的计算。计算结果表明,自由电弧沉积的膜厚分布曲线存在峰值现象,而磁控电弧沉积的膜厚分布曲线可使该峰值现象得到消除;同时,磁控电弧沉积的膜厚分布均匀性与阴极半径和基片配置距离密切相关,当两者比值选取适当时,可获得较均匀的膜厚分布;旋转基片上所获得的膜厚分布均匀性较之静止基片上获得的膜厚分布均匀性要好。理论计算值与实验测量值吻合。

关键词: 真空电弧沉积, 膜厚分布, 计算模型

Abstract: Computer caloulation of pure metal film thickness disiribution previded by the Vacuum arc ion boam deposition technique is presented in this paper. For the random arc with a low arc current, a model of single cathode spot with ion beam flux taking into account the cosine function spatial distribution is deduced. For the are steered by an external magnetie field, whieh is parallel to the cathode surface,a multiple cathode spots model is developed. And calculation comparison between the static substrate and rotating substrate is made. Results show that, the film thickness distribution is non-uniform when the are is not controlled and tends to be uniform when the arc is steered by an external parallel magnetic field if the cathode geometry and substrate location are well chosen. Also, film thickness distribntion is more uniform on a rotating substrate then that on a static substrate.Calculation results correspond to the experimental results.

Key words: film thickness distribution, vacuum arc deposition, calculationmodel

王浩, 邹积岩, 杨磊, 程礼椿, 欧阳红林. 真空电弧沉积簿膜厚度分布计算[J]. 应用科学学报, 1995, 13(3): 339-346.

WANG HAO, ZOU JIYAN, YANG LEI, CHENG LICHUN, OUYANG HONHLIN. CALCULATION OF FILM THICKNESS DISTRIBUTION PROVIDED BY VACUUM ARC DEPOSITIONWANG[J]. Journal of Applied Sciences, 1995, 13(3): 339-346.